UF3C120040K4S SiC cascode FET, 1200V 65A Rdson 0.035R TO-247-4L

1200V SiC-MOSFET-Cascode 35mR TO-247-4L

Description: United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Features: - Typical on-resistance Rds(on) of 35mR - Maximum operating temperature of 175°C - Excellent reverse recovery - Low gate charge - Low intrinsic capacitance - ESD protected, HBM class 2 - TO-247-4L package for faster switching, clean gate waveforms

Typical Applications - ElectricalVehicel charging - PV inverters - Switch mode power supplies - Power factor correction modules - Motor drives - Induction heating