UF3C120150B7S SiC cascode FET, 1200V 18.4A Rdson 0.15R, D²Pak-7L

SiC-Kaskode-FET, 1200V, 18,4A, Rdson 0,15R D²Pak-7L

Description: This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Features: - Typical on-resistance RDS(on),typ of 150mR - Maximum operating temperature of 175°C - Excellent reverse recovery - Low gate charge - Low intrinsic capacitance - ESD protected, HBM class 2 - D²Pak-7L package for faster switching, clean gate waveforms

Applications: - EV charging - PV inverters - Switch mode power supplies - Power factor correction modules - Motor drives - Induction heating