MASTERGAN1 GaN H-bridge, 600 V, 10 A, RDS(ON) 0.15 Ohm, QFN-31

The MASTERGAN1 is an advanced power system-in-package that integrates a gate driver and two GaN (enhancement type) transistors in a half-bridge configuration. The integrated GaN power transistors have an RDS(on) of 150 mΩ and a drain-source breakdown voltage of 650 V, while the high side of the embedded gate driver can be easily powered by the integrated bootstrap diode. The MASTERGAN1 features UVLO protection in both the low and high driver sections to prevent the circuit breakers from operating at low efficiency or under hazardous conditions, and the latching function avoids cross-circuits.

Technical features