MASTERGAN5 GaN H-bridge, 600 V, 4 A, 0.45 Ohm, QFN-31

The MASTERGAN5 is an advanced power system-in-package that includes a gate driver and two enhancement-mode GaN power transistors in a half-bridge configuration. configuration.The integrated GaN power transistors have a drain-source blocking voltage of 650 V and an RDS(ON) of 450 mOhms, while the high-side of the integrated gate driver is readily by the integrated bootstrap diode. The MASTERGAN5 has UVLO protection for both the low-side and high-side of the low-side and high-side driver sections to prevent the circuit breakers from operating in low efficiency or hazardous conditions, and the interlock function avoids cross-circuits.

Technical data