UF3SC065030B7S SiC cascode FET, 650V 62A Rdson 0.027R, D²Pak-7L

SIC Cascade FET, 650V, 47A, Rdson 0.042R D²Pak-7L.

Description: This SiC-FET device is based on a unique 'cascode' circuit configuration in which a normally powered-on SiC-JFET is packed together with a Si-MOSFET to produce a normally powered-off SiC-FET device. The standard gate driver characteristic of the device enables a true drop-in replacement for Si-IGBTs, Si-FETs, SiC-MOSFETs or Si-superjunction devices. Available in the D2PAK-7L package, the device features extremely low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and for all applications requiring standard gate control.

Features: • Typical on-resistance RDS(on), type 42mR • Maximum operating temperature of 175°C. • Excellent reverse recovery • Low gate charge • Low intrinsic capacity • ESD protected, HBM class 2 • D²PAK-7L package for faster switching and clean gate waveforms

Applications: • EV charging circuit • PV inverters • Switched-mode power supplies • Modules for reactive power compensation • Motorized drives • Induction heating