UF3C065030B3 SiC cascode FET, 650V 65A Rdson 0.027R D2PAK-3L

650V SiC-MOSFET-Cascode 27mR D2PAK-3L

Description: United Silicon Carbide's cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC snubbers, and any application requiring standard gate drive.

Features: - Typical on-resistance Rds(on) of 27mR - Maximum operating temperature of 175°C - Excellent reverse recovery - Low gate charge - Low intrinsic capacitance - ESD protected, HBM class 2 - Very low switching losses (required RC-snubber loss negligible under typical operating conditions)

Typical Applications - ElectricalVehicel charging - PV inverters - Switch mode power supplies - Power factor correction modules - Motor drives - Induction heating