IMZA65R027M1H SiC-MOSFET N-Ch 650V 59A 0.027R, TO-247-4

MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Features - Optimized switching behavior at higher currents - Commutation robust fast body diode with low Qrr - Superior gate oxide reliability - Best thermal conductivity and behavior - Lower RDS(on) and pulse current dependency on temperature - Increased avalanche capability - Compatible with standard drivers (recommended driving voltage: 18V) - Kelvin source provides up to 4 times lower switching losses

Benefits - Unique combination of high performance, high reliability and ease of use - Ease of use and integration - Suitable for topologies with continuous hard commutation - Higher robustness and system reliability - Efficiency improvement - Reduced system size leading to higher power density

Potential applications - SMPS - UPS (uninterruptable power supplies) - Solar PV inverters - EV charging infrastructure - Energy storage and battery formation - Class D amplifiers

Product validation Fully qualified according to JEDEC for Industrial Applications