0.01 GHz to 10 GHz Low Noise Amplifier

The ADH8411S-CSH is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.

The ADH8411S-CSH provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.

The ADH8411S-CSH also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.

The ADH8411S-CSH is housed in a RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP.

Throughout this data sheet, multifunction pins, such as RFOUT/VDD, are referred to either by the entire pin name or by a single function of the pin, for example, RFOUT, when only that function is relevant. Additional application and technical information can be found in the Commercial Space Products Program brochure and the HMC8411 data sheet.

APPLICATIONS

* Low earth orbit (LEO) satellites

* Military communications

* Low noise figure: 1.7 dB typical

* Single positive supply (self biased)

* High gain: 15.5 dB typical

* High OIP3: 34 dBm typical

* 6-lead, 2 mm × 2 mm LFCSP