100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch

The ADRF5030 is a non-reflective, single-pole double-throw (SPDT) switch manufactured using the silicon on insulator (SOI) process. The ADRF5030 operates from 100 MHz to 20 GHz with insertion loss of lower than 1.2 dB and isolation of higher than 45 dB. The device has an RF input power handling capability of 33 dBm average/36 dBm peak for both RFC and RFx through paths, termination paths, and hot switching for both RFC and RFx ports. The ADRF5030 operates with dual-supply voltages of ±3.3 V. The ADRF5030 employs complementary metal-oxide semiconductor (CMOS) and low-voltage transistor to transistor logic (LVTTL)-compatible control.

The ADRF5030 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance are derated. See Table 2 for more details.

The ADRF5030 is pin compatible with the ADRF5022 and ADRF5026, and also pin compatible with ADRF5031, a slow-switching, low cut-off version, which operates between 9 kHz to 20 GHz.

The ADRF5030 is packaged in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA). The ADRF5030 operates from −40°C to +105°C.

APPLICATIONS

* Test instrumentation

* Military radios, radars, electronic counter measures (ECMs)

* Microwave radios and very small aperture terminals (VSATs)

* Wideband frequency range, 100 MHz to 20 GHz

* Non-reflective design

* Low insertion loss

* 0.7 dB typical between 0.1 GHz to 6 GHz

* 0.9 dB typical between 6 GHz to 12 GHz

* 1.2 dB typical up to 20 GHz

* High isolation

* 55 dB typical between 100 MHz to 6 GHz

* 50 dB typical between 6 GHz to 12 GHz

* 45 dB typical up to 20 GHz/li>

* High input linearity

* P0.1dB: >36 dBm typical

* IP3: 60 dBm typical

* High RF power handling

* Through path: 36 dBm peak / 33 dBm avg

* Terminated Path: 36 dBm peak / 33 dBm avg

* Hot switching path: 36 dBm peak /33 dBm avg