1 GHz to 8 GHz, Low Noise Amplifier with Integrated Temperature Sensor and Enable and Disable Function

The ADL8108 is a highly integrated, 1 GHz to 8 GHz, low noise amplifier (LNA). On-chip features include input and output AC coupling capacitors, an integrated bias inductor, an integrated temperature sensor, and an enable or disable pin (VPD).

Typical gain, output power 1 dB compression (OP1dB), third-order intercept point (OIP3), second-order intercept point (OIP2), and noise figure are 20 dB, 22 dBm, 35.5, 42 dBm, and 1 dB, respectively, from 3 GHz to 4.5 GHz. The nominal operating current (IDQ), which can be adjusted, is 90 mA operating from a 5 V supply voltage (VDD). Operation at 3 V is also supported.

The ADL8108 is fabricated on a pseudomorphic high electron mobility transistor (pHEMT) process. This device is housed in an RoHS-compliant, 3 mm x 3 mm, 16-lead LFCSP package and is specified for operation over an extended temperature range of −55°C to +125°C.

APPLICATIONS

* Telecommunications

* Test instrumentation

* Military

* Single positive supply: 5 V and IDQ of 90 mA nominal

* RBIAS drain current adjustment pin

* Integrated temperature sensor

* Integrated enable and disable function

* Gain: 20 dB typical from 3 GHz to 4.5 GHz