MV31000-GaAs-Varactor

GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown by the Chemical Vapor Deposition technique. The layers are processed using proprietary techniques resulting in varactors with constant gamma, high Q and repeatable tuning curves. These varactors are available in a variety of microwave ceramic packages or bondable chips for operation from UHF to millimeter wave frequencies.