MSC025SMA330B4N

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

The MSC025SMA330B4N is part of our MA Family of mSiC MOSFETs. This 3300V (3.3 kV) SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 25 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 106A. With maximum ratings reaching up to 150°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

The TO-247-4 Notch package enables efficient, high-power designs with improved thermal performance and reduced parasitic effects. Its four-lead layout includes a Kelvin source for lower gate ringing and switching losses, while the Notch design enhances creepage distance for better high-voltage reliability.