650-V 270-mΩ GaN FET with integrated driver and protection

The LMG3616 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3616 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3616 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.