High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches

The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as −3.5 V to +150 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.