Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, D2PAK-2L

Silicon Carbide (SiC) Schottky Diodes use a completely newtechnology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellentthermal performance sets Silicon Carbide as the next generation ofpower semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, andreduced system size and cost.