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Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

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The NXH40B120MNQ0 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of two 40mohm/1200V SiC MOSFETs and two 40A/1200V SiC diodes. Two additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

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