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Dual N-Channel Enhancement Mode Field Effect Transistor 50V, 0.51A, 2Ω

onsemi

These dual N-Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.

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