Power MOSFET, P-Channel, QFET^{®, -100 V, -11.5 A, 290 mΩ, TO-220}

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for lowvoltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.