Power MOSFET, P-Channel, QFET^{®, -60 V, -11.4 A, 175 mΩ, TO-220}

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.