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N-Channel Dual Cool™ Power Trench® SyncFET™ 30V, 90A, 1.9mΩ

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MPN:
FDMS3006SDC
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This N-Channel MOSFET is produced using an advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

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