Power MOSFET, N-Channel, QFET^{®, 600 V, 9.5 A, 730 mΩ, TO-220F}

These N-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.