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Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK

onsemi

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MPN:
FQB8N90CTM
Producent:
onsemi
Obudowa:
TO-263
Dodany do bazy:
Ostatnio widziany:

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

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