IGBT, Field Stop IV/4 Lead

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop IV Trench construction, and providessuperior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged freewheeling diode with a low forward voltage.