1200 V, 40 A trench field-stop IGBT with full rated silicon diode
Nexperia
Przejdź do sklepu »
- Darmowa próbka
- MPN:
- NGW40T120H3DF
- Producent:
- Nexperia
- Dodany do bazy:
- Ostatnio widziany:
Sugerowane produkty dla ngw40t120h3df
NGW40T120H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGW40T120H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 1200 V, 40 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu Nexperia