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80V, 90A, 5.6mΩ, REXFET-1 N-Channel Power MOSFET in SO8-FL (5×6)

Intersil

The RBE056N08R1SZN6 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.

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