100V, 20A, 21mΩ, REXFET-1 N-Channel Power MOSFET in μSO8-FL (3x3)
Intersil
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- Darmowa próbka
- MPN:
- RBE210N10R1SZN2#HB0
- Producent:
- Renesas Electronics
- Dodany do bazy:
- Ostatnio widziany:
Sugerowane produkty dla rbe210n10r1szn2
The RBE210N10R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The ultra-compact package is approximately 90% smaller than the traditional DPAK, helping reduce board space and enhance design flexibility. Additionally, it uses Wettable Flank leads that provide excellent solderability and support reliable optical inspection.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
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Produkt pochodzi z oferty sklepu Intersil