SI2301CDS-T1-GE3 MOSFET, P-channel, -20 V, -1.8 A, 0.112R, SOT-23
reichelt elektronik
RSS
0.26 EUR1.11 PLN
- Sklep zagraniczny
- MPN:
- SI2301CDS-T1-GE3
- Kod:
- 406477
- Producent:
- VISHAY
- Obudowa:
- SOT23-3
- GTIN-13:
- 9900004064774
- Waluta:
- euro
- Dodany do bazy:
- Ostatnio widziany:
Sugerowane produkty dla si2301
Power MOSFET
Description: The third generation of power MOSFETs from Vishay provides the developer with the ultimate combination of fast switching, robust component design, low on-resistance and cost efficiency. The DPAK is intended for surface mounting using vapour phase, infrared or wave soldering techniques. The straight line version (IRFU or SiHFU series) is intended for through-hole mounting applications. In typical surface mounting applications, power losses of up to 1.5 W are possible.
Features: • Dynamic dV/dt evaluation • Repeated avalanche rating • SMD mounting (IRFR9024, SiHFR9024) • Straight connections (IRFU9024, SiHFU9024) • Available as belted goods • P-channel • Fast switching
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu reichelt elektronik