Infineon Technologies IRF2807PBF N-channel MOSFET 230W TO-220AB MOSFETs

Infineon Technologies IRF2807PBF is an N-channel MOSFET engineered for high-performance applications, encapsulated in a TO-220AB package. This metal-oxide-semiconductor field-effect transistor is designed to handle a maximum power dissipation of 230 watts and features a drain-source voltage (VDS) rating of 75 volts, with a continuous drain current (ID) of up to 82 amperes. Utilising its unipolar transistor structure, the IRF2807PBF offers efficient switching capability, making it ideal for use in power supply circuits, motor controls, and a variety of load switching applications where high-speed performance is crucial. Its robust build and materials ensure reliability and efficiency in demanding operating conditions, aligning with the needs of advanced electronic systems and industrial equipment.