EVLSTDRIVEG212 Evaluation board for STDRIVEG212 220 V high-speed half-bridge gate driver with 2.2 mΩ, 100 V e-mode GaN HEMT

As a part of the STDRIVE product family, the STDRIVEG212 is a 220 V high-speed half-bridge gate driver optimized for 5 V driving enhanced-mode GaN HEMTs.

It features separated high-current sink/source gate driving pins, integrated LDOs, undervoltage, bootstrap diode, high-side fast startup, overtemperature, fault and shutdown pins, and standby to fully support hard-switching topologies in a 4x5 mm QFN package.

The EVLSTDRIVEG212 board is easy to use, as well as quick and suitable for evaluating the characteristics of the STDRIVEG212 driving two 2.2 mΩ typ., 100 V e-mode GaN switches in a half-bridge configuration. The STDRIVEG212 comes in a 4x5 mm QFN package, while GaN switches are in a 3x5 mm En-FCQFN package. The EVLSTDRIVEG212 board is also suitable for evaluating the STDRIVEG612 features.

It provides an onboard programmable deadtime generator and a 3.3 V linear voltage regulator to supply external logic such as microcontrollers.

Spare footprints are also included to allow for customization of the board for the final application, such as separate LIN and HIN input signals or single PWM signal.

The EVLSTDRIVEG212 is 56 x 79 mm wide, 4 layers, 1.5 Oz, FR-4 PCB, resulting in an overall 19 °C/W Rth(J‑A) (equivalent to 38 °C/W for each GaN) in still air without heatsink to evaluate high-power applications.