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650 V, 30 A trench field-stop IGBT with full rated silicon diode

Nexperia

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MPN:
NGW30T65M3DFQ
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Nexperia
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The NGW30T65M3DFQ is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFQ is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency applications, such as power inverters and converters.

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