700V, 480mΩ, SuperGaN FET in DPAK TO-252

The TP70H480G4ZS 700V, 480mΩ, Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV SuperGaN® platform. It integrates high-voltage GaN High Electron Mobility Transistor (HEMT) and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Renesas GaN achieves higher efficiency than silicon by minimizing gate charge, crossover loss, and reverse recovery charge. The TP70H480G4ZS is available in a DPAK TO-252 package with a common-source configuration.