Infineon Technologies BSS131H6327XTSA1 MOSFET 1 N-channel 0.36 W SOT-23 MOSFET

Infineon Technologies' BSS131H6327XTSA1 is a MOSFET single N-channel device designed to provide efficient electronic switching and amplification in compact applications. This metal oxide semiconductor field effect transistor (MOSFET) is housed in a SOT-23 package, contributing to its lightweight construction and space-saving profile ideal for high-density circuit assemblies. The MOSFET has a thermal power dissipation of 0.36 watts and is characterised by its ability to operate in the depletion mode, making it well-suited for applications requiring swift switching performance, such as signal amplification, power management systems, and voltage conversion circuits. By utilising the advantages of an insulated gate field effect transistor (IGFET), it offers low on-resistance and high-speed operation, making it a preferred choice for engineers working on sensitive electronic circuits requiring precise control of voltage and current without the need for a large footprint.