Infineon BSP129H6327XTSA1 MOSFET 1 N-channel 1.8W SOT-223

Infineon Technologies BSP129H6327XTSA1 is a metal-oxide-semiconductor field-effect transistor (MOSFET), featuring a single N-channel configuration housed in a compact SOT-223 package. This MOS transistor is designed to handle a maximum power dissipation of 1.8 watts, making it suitable for applications requiring efficient power control and high switching speeds. The BSP129 operates as a unipolar transistor, taking advantage of its field effect mechanism to modulate electrical conductivity via a voltage applied to the gate, controlling the flow of current between the drain and source. Being a depletion type FET, it remains conductive for zero gate-source voltage, further broadening its utility in amplification and switching circuits. Its robust design and reliable performance characteristics make it ideal for use in applications such as power management systems, voltage regulation circuits, and various electronic switching applications.