IPD052N10NF2S

Infineon

Darmowa próbka

MPN:: IPD052N10NF2SATMA1
Kod:: IPD052N10NF2S
Producent:: Infineon
Obudowa:: TO-252
Dodany do bazy:: 18.01.2026
Ostatnio widziany:: 27.03.2026

StrongIRFET™ 2 single N-channel power MOSFET 100 V in DPAK Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

Sugerowane produkty dla ipd052n10nf2s

StrongIRFET™ 2 single N-channel power MOSFET 100 V in DPAK

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon