IQE006NE2LM5CG

Infineon

Darmowa próbka

MPN:: IQE006NE2LM5CGATMA1
Kod:: IQE006NE2LM5CG
Producent:: Infineon
Dodany do bazy:: 21.01.2026
Ostatnio widziany:: 24.03.2026

OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 25 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or imp

Sugerowane produkty dla iqe006ne2lm5cg

OptiMOS™ low-voltage power MOSFET 25V in PQFN 3.3x3.3 Source-Down Center-Gate package with industry leading RDS(on)

IQE006NE2LM5CG OptiMOS™ low-voltage power MOSFET Source-Down is available as a Center-Gate footprint version. Placing the gate in the middle of the footprint leads to an optimized source connection. Center-Gate footprint offers the advantage of optimized and easy parallelization of MOSFETs as it comes with a larger drain to source creepage distance, improving current capability, resulting in higher output levels.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon