IQE013N04LM6CG

Infineon

Darmowa próbka

MPN:: IQE013N04LM6CGATMA1
Kod:: IQE013N04LM6CG
Producent:: Infineon
Dodany do bazy:: 28.01.2026
Ostatnio widziany:: 18.03.2026

OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 40 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve

Sugerowane produkty dla iqe013n04lm6cg

OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on)

IQE013N04LM6CG, innovative OptiMOS™ power MOSFET Source-Down 40 V, 1.35mOhm, in a 3.3x3.3 PQFN Source-Down Center-Gate package. This best-in-class power MOSFET challenges the status quo in power density and form factor in the end application, minimize the internal restrictions of PCB area requirements, enabling an ergonomic design and optimizing the end user experience.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon