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20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1.5 mm x 1.5 mm, 27 mOhm, gate ESD pro

Texas Instruments

20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1.5 mm x 1.5 mm, 27 mOhm, gate ESD pro RSS Sample
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MPN:
CSD75207W15
Producent:
TEXAS INSTRUMENTS
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The CSD75207W15 device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications. The device has also been awarded with U.S. patents 7952145, 7420247, 7235845, and 6600182.

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