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30-V, N channel NexFET™ power MOSFET, dual common drain LGA, 5.5 mOhm, gate ESD protection

Texas Instruments

30-V, N channel NexFET™ power MOSFET, dual common drain LGA, 5.5 mOhm, gate ESD protection RSS Sample
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MPN:
CSD87501L
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This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.

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