InGaP HBT Power Amplifier SMT, 5 - 6 GHz

The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage. Vpd can be used for full power down or RF output power/current control.

Applications

* UNII

* HiperLAN & 802.11a WLAN

* Gain: 17 dB

* Saturated Power: +29 dBm

* 38% PAE

* Supply Voltage: +5V

* Power Down Capability

* Low External Part Count