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20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection

Texas Instruments

This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

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