HMC1087-Die

8 Watt GaN MMIC Power Amplifier, 2 - 20 GHz

* High Psat: +39 dBm

* Power Gain at Psat: +5.5 dB

* High Output IP3: +45 dBm

* Small Signal Gain: 11 dB

* Supply Voltage: +28V @ 850 mA

* 50 Ohm Matched Input/Output

* Die Size: 2 x 4 x 0.1 mm

The HMC1087 is an 8W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and 20 GHz. The amplifier typically provides 11dB of small signal gain, +39 dBm of saturated output power, and +45 dBm output IP3 at +29 dBm output power per tone. The HMC1087 draws 850 mA quiescent current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was aquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina. Applications

* Test Instrumentation

* General Communications

* Radar