GaAs InGaP HBT MMIC Ultra Low Phase Noise, Distributed Amplifier, 2 - 18 GHz

The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ω facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).

Applications

* Radar, EW & ECM

* Microwave Radio

* Test Instrumentation

* Military & Space

* Fiber Optic Systems

* Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz

* P1dB Output Power: +15 dBm

* Gain: 14 dB