GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz

The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC to 6 GHz making the HMC637A ideal for EW, ECM, Radar and test equipment applications.

The HMC637A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Applications

* Telecom Infrastructure

* Microwave Radio & VSAT

* Military & Space

* Test Instrumentation

* Fiber Optics

* P1dB Output Power: +30.5 dBm

* Gain: 14 dB

* Output IP3: +41 dBm

* Bias Supplies: +12V, +6V, -1V

* 50 Ohm Matched Input/Output

* Die Size: 2.98 x 2.48 x 0.1 mm