Wideband Low Noise Amplifier Chip, 2 - 20 GHz

The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, <3.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMC-ALH102 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.

Applications

* Wideband Communications Receivers

* Surveillance Systems

* Point-to-Point Radios

* Point-to-Multi-Point Radios

* Military & Space

* Test Instrumentation

* Noise Figure: <2.5 dB

* Gain: 11.6 dB @ 10 GHz

* P1dB Output Power: +10 dBm

* Supply Voltage: +2V @ 55 mA

* Die Size: 3.0 x 1.435 x 0.1 mm