GaAs, pHEMT, Low Noise Amplifier, 400 MHz to 52 GHz

The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 400 MHz to 52 GHz. The HMC1126ACEZ provides 12 dB of typical gain, 28.5 dBm typical output third-order intercept (OIP3), 17.5 dBm typical output power at 1 dB gain compression (OP1dB), and a 3.5 dB typical noise figure at 10 GHz to 26 GHz. The HMC1126ACEZ requires 85 mA from a 5 V supply. All of the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint.

The HMC1126ACEZ is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small outline no lead cavity (LGACAV) package.

APPLICATIONS

* Test instrumentation

* Military and space

* Gain: 12 dB typical at 10 GHz to 26 GHz

* Input return loss: 14 dB typical at 10 GHz to 26 GHz

* Output return loss: 16 dB typical at 10 GHz to 40 GHz

* OP1dB: 17.5 dB typical at 10 GHz to 26 GHz

* PSAT: 21 dBm typical at 10 GHz to 26 GHz