SFH617A-4 Optocoupler, phototransistor output, 5.3 KV, CTR 160-320%, DIP-4

Description The SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.

Features - Good CTR Linearity Depending on Forward Current - Isolation Test Voltage, 5300 VRMS - High Collector-Emitter Voltage, VCEO = 70 V - Low Saturation Voltage - Fast Switching Times - Low CTR Degradation - Temperature Stable - Low Coupling Capacitance - End-Stackable, .100 " (2.54 mm) Spacing - High Common-Mode Interference Immunity - Lead-free component - Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals - UL1577, File No. E52744 System Code H or J, Double Protection - DIN EN 60747-5-2 (VDE0884), DIN EN 60747-5-5 pending, Available with Option 1 - CSA 93751