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MJ11032G Darlington transistor, NPN, 120V, 50A, 300W, TO-3

reichelt elektronik

MJ11032G Darlington transistor, NPN, 120V, 50A, 300W, TO-3 RSS 26.67 26.67 EUR113.78 PLN
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MPN:
MJ11032G
Kod:
41798
Producent:
onsemi
Obudowa:
TO-247
GTIN-13:
9900000417987
Waluta:
euro
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
+73% (14.09.2025)
Poprzednia cena:
15.39 EUR

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

Features - high DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc; - hFE = 400 (Min) @ IC = 50 Adc - curves to 100 A (Pulsed) - diode Protection to Rated IC - monolithic Construction with Built-In Base-Emitter Shunt Resistor - junction Temperature to +200C - pb-Free Packages are Available

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