IRFD110PBF MOSFET, N-Ch 100V 1A 1.3W, HD-1

Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectifeness. The 4-pin DIP package is a low cost machine-onsertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

Features - repetitive avalanche rated - dynamic dV/dt rating - for automatic Insertion - end Stackable - 175°C Opertating temperature - fast switching - ease of Paralleling