IRFD210PBF MOSFET, N-Ch 200V 0.6A 1.5R, HD-1

Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

Features - Dynamic dv/dt rating - for atomatic insertion - 175°C operating temperature - end stackable - fast switching - ease of paralleling - simple drive requirements