IRFL014NPBF MOSFET, N-Ch 55V 1.9A 0.16R, SOT-223

HEXFET® Power MOSFET

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Features - Advanced Process Technology - Ultra Low On-Resistance - Dynamic dv/dt Rating - Fast Switching - Fully Avalanche Rated - Lead-Free